While in conventional chip package, the compound of the stacks by means of wire bonding, this happens in the few dozen microns thick TSV Packages (Through Silicon Vias) by hundreds of tiny holes. The electrical connection is made in the vertical direction by electrodes, which are arranged through the holes. The result is a significantly better signal transfer.
The 128-gigabyte TSV-DDR4 RDIMM module from Samsung  consists of a total of 144 DDR4 chips, arranged in 36 4-gigabyte DRAM packages. Each 4-gigabyte package includes four 8Gb chips in 20 nm technology. Compared with 64-gigabyte LR-DIMMs almost doubled transfer rate of 2400 Mbit / s is achieved, the power consumption drops by 50% at the same time. With future modules Samsung wants to achieve even transfer speeds of 2667 and 3200 Mbit / s.