Monday, November 25, 2013

MRAM: industrial consortium tried it again - Heise Newsticker

 ST-MRAM cell of Ever spin
ST-MRAM cell of Ever spin  Click to enlarge
image: Ever Spin
While supplies Ever spin, the former MRAM division of Freescale MRAM memory chips for years, but reached 16 megabits or soon probably 64 MBit just half a thousandth of that store what NAND flashes today. And even bring SDRAM chips it to 8Gb, so 125 times. Nevertheless, an industry consortium promises involving several industry giants such as Micron, Renesas, the wafer manufacturers Shin-Etsu and material specialists Tokyo Electron to develop competitive MRAM chips by the end of 2017. The line of the MRAM project is, according to Japanese publication Nikkei Aisan Review Professor Tetsuo Endoh of Tohoku University take over, who is working in the Center for Spintronics Integrated Systems.

2018 could then begin production of MRAM with Micron. Other than DRAM cells retain their contents MRAM cell after switching off the power supply. If MRAM actually achieve similar capacity and speed as DRAM, they promise advantages especially for mobile devices. The same also hope the developers of ReRAM and memristors, which, however, rather aimed at the replacement of NAND flash.

Who else mixes together in the race for MRAM, is currently difficult to assess. For example, Grandis had longer cooperates with Renesas and Hynix, ended up being swallowed in 2011 by the DRAM and NAND flash market leader Samsung. Toshiba partners with TDK – as previously IBM. And Micron 2011 was entered with the A * Star Data Storage Intitute of Singapore in an MRAM cooperation. But a few weeks ago has been reported in a scientific journal on ST-MRAM an “IBM-micron MRAM Alliance”. (ciw)

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